Compound Semiconductor Materials Scientist - Growth Engineer
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POST DATE 8/19/2016
END DATE 10/19/2016
MIT Lincoln Laboratory
JOB DESCRIPTIONGroup 89—Quantum Information and Integrated Nanosystems Group
The Quantum Information and Integrated Nanosystems Group conducts quantum information science research from a shared foundation of innovative control-signal design, outstanding fabrication tools, and well-equipped measurement infrastructure. The group has a broad range of experimental and prototyping activities. The group's quantum information science activities include the development of superconducting and trapped-ion qubits and quantum sensing with nitrogen-vacancy (NV) centers in diamond. In addition, the group has robust capabilities in classical superconducting circuits, complementary metal-oxide semiconductor (CMOS) design and fabrication, and integrated photonics. These component technologies are used in synergy with quantum information science demonstrations, as well as in standalone applications that include beyond-CMOS circuit technologies, energy-starved sensors, compact optical communication and laser radar transceivers, and microwave photonic signal processing.
The Quantum Information and Integrated Nanosystems Group is seeking a materials scientist or epitaxial-material growth engineer having experience in the design, growth, and characterization of compound-semiconductor epitaxial materials for the realization of advanced optoelectronic components and photonic integrated circuits (PICs). Material systems of interest include AlGaAs/GaAs, InGaAsP/InP, InGaAlAs/InP, AlGaAsSb/GaSb, AlGaN/GaN, and InGaN/GaN. Example components include high-power diode lasers and optical amplfiers, Geiger-mode avalanche photodiodes (GmAPDs), single-photon emitters, high-current waveguide photodiodes, wideband optical modulators, and arrays of these components. PICs will be realized using both monolithic and hybrid integration techniques. The successful candidate will work closely with other Staff to develop advanced components, circuits, and subsystems, and to apply them to solve problems in the national interest.
Requirements for the position include a Ph.D. in Materials Science and Engineering, Electrical Engineering, Physics or related field with 5 or more years’ experience in the development of compound-semiconductor epitaxial materials using metalorganic chemical vapor deposition (MOCVD) growth techniques. Must have hands-on experience in the operation and maintenance of MOCVD reactors. In lieu of a Ph.D., an M.S. degree with 10 or more years of applicable experience will be considered.
Must exhibit a detailed understanding of the interplay between material properties and device performance. Knowledge of chemistry, electrical and optical characterization techniques, and semiconductor fabrication processes is desirable. Experience in both research laboratory and industrial production environments is also desirable. Candidate must demonstrate a record of technical innovation, have excellent documentation and communication skills, and be able to work both independently and in a dynamic multi-disciplined team environment.
MIT Lincoln Laboratory is an Equal Employment Opportunity (EEO) employer. All qualified applicants will receive consideration for employment and will not be discriminated against on the basis of race, color, religion, sex, sexual orientation, gender identity, national origin, age, veteran status, disability status, or genetic information; U.S. citizenship is required.